CIE Components in Electronics
With the increasing popularity of high-functionality smartphones demand is increasing for smaller, thinner form factor devices with lower power consumption that enable longer battery life between charges. To meet these demands, designers are turning to power MOSFETs that feature lower on-resistance for use in charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches, while supporting large currents.
The µPA2600 and µPA2601 MOSFETs look to meet these demands for further miniaturization and low on-resistance while reducing mounting areas in a wide variety of applications, including load switches (which turn power applied to ICs on or off) and charge/discharge control in portable devices and on/off control and overcurrent cutoff switches in RF power amplifiers (amplifiers for high-frequency signals).
A variety of device types, with differing voltages and polarities, such as power MOSFETs, are required to match the specifications of power supplies used in portable devices, including smartphones.
Key features of the new P-channel power MOSFETs include: an on-resistance of 9.3 mΩ (typical value at VGSS=4.5 V) for the 20 V (VDSS) µPA2600 device and 10.5 mΩ (typical value at VGSS=10 V) for the 30 V µPA2601 device, enabling power savings in end-use products; a compact package for reduced mounting areas. The µPA2600 and similar products can reduce the mounting area by approximately 30 percent compared to existing 3 mm × 2 mm packages, and the µPA2672 and similar products can reduce the mounting area by approximately 40 percent compared to existing 3 mm × 3 mm packages; and comprising of eight devices, the new P- and N-channel power MOSFETs are concentrated in the 12- to 30 V range common in portable devices: 4 P-channel products including the µPA2630, 3 n-channel products including the µPA2600, and the µPA2690, which holds both an N-channel and a P-channel device in a single package. Thus, this lineup can support a variety of applications, including charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches.
