Simon Stacey, chief operating officer at CGD
Cambridge GaN Devices (CGD), the fabless semiconductor company that develops energy-efficient GaN-based power devices, has announced a partnership with GlobalFoundries (GF), a semiconductor manufacturer. The collaboration strengthens CGD’s fabless strategy, expanding the supply chain for its ICeGaN power devices.
CGD’s single-chip technology runs with standard Si MOSFET drivers and is built using a standard Si CMOS wafer fab process. Leveraging GF’s state-of-the-art 8” process ensures CGD products remain competitive in cost.
ICeGaN IP is design-based rather than process-based, making it fab agnostic and easily transferrable to new foundries. CGD’s design flow, built on years of GaN experience, enables fast fab process porting. Advanced machine learning algorithms refine models using proprietary test chip characterisation data, enabling timely delivery of reliable products. This ensures “right first time” designs and faster time to market.
Simon Stacey, chief operating officer at CGD, said: “Applying the CGD design flow to the excellent GF process design kit (PDK) is essential to enabling CGD to develop and manufacture our next generation GaN power devices at a much faster time to market. We are delighted to be partnering with GF, as their renowned foundry services and commitment to GaN are a perfect fit for our ICeGaN power devices.”
According to CGD, “GaN offers unique advantages including higher efficiency, higher power density, compact size and faster switching speeds.” These benefits, coupled with the flexibility of the fabless model, position CGD to meet growing market demand for GaN technology.
ICeGaN combines a GaN switch, interface and protection circuitry on the same chip, unlike most multi-chip or co-packaged solutions. CGD’s integrated approach means devices are simple to drive using standard silicon technology and are very rugged. CGD said it is the only company worldwide with Single-Chip Technology that can run on a standard driver, making next-generation power systems more efficient and scalable. This enables design engineers to confidently adopt GaN, which offers efficiency, size and thermal advantages over traditional silicon devices.
